G40H120DF2 IGBT
G40H120DF2 IGBT Features: Â
Type: IGBT + Anti-Parallel Diode
Marking Code: G40H120DF2
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 37 nS
Coesⓘ – Output Capacitance, typ: 220 pF
Qgⓘ – Total Gate Charge, typ: 158 nC
₨235
CompareType: IGBT + Anti-Parallel Diode
Marking Code: G40H120DF2
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 37 nS
Coesⓘ – Output Capacitance, typ: 220 pF
Qgⓘ – Total Gate Charge, typ: 158 nC
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