IRF9Z24N MOSFET

IRF9Z24N MOSFET Details:
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ – Maximum Power Dissipation: 45 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 12 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 19(max) nC
trⓘ – Rise Time: 55 nS
Cossⓘ – Output Capacitance: 170 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.175 Ohm

IRF9Z24N MOSFET Price in Pakistan

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