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IRFB4110 MOSFET


Type Designator: IRFB4110
Marking Code: IRF4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 370 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 180 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 150 nC
trⓘ – Rise Time: 67 nS
Cossⓘ – Output Capacitance: 670 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0045 Ohm

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IRFB4110 MOSFET details:
Marking Code: IRF4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 370 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 180 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 150 nC
trⓘ – Rise Time: 67 nS
Cossⓘ – Output Capacitance: 670 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0045 Ohm

IRFB4110 MOSFET Price in Pakistan

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