KGF75N60KDB IGBT
KGF75N60KDB IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 357 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 50 nS
Coesⓘ – Output Capacitance, typ: 250 pF
Qgⓘ – Total Gate Charge, typ: 250 nC
₨350
CompareType: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 357 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 50 nS
Coesⓘ – Output Capacitance, typ: 250 pF
Qgⓘ – Total Gate Charge, typ: 250 nC
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