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MS30N100HGC0 MOSFET


Features
VDS=1000V,ID=30A
RDS(on)<0.38Ω
Avalanche-tested and current-rated Fast intrinsic Rectifier

Applications
High power density
Easy to mount
Space savings

950

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Features
 VDS=1000V,ID=30A
RDS(on)<0.38Ω
 Avalanche-tested and current-rated Fast intrinsic Rectifier

Applications
 High power density
 Easy to mount
 Space savings

MS30N100HGC0 MOSFET Price in Pakistan

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