NSI6602D
Features
- Isolated dual channel driver
- Input side supply voltage: 2.7V to 5.5V
- Driver side supply voltage: up to 25V with UVLO
- 4A peak source and 6A peak sink output
- High CMTI: ±150kV/μs typical
- 25ns typical propagation delay
- 5ns maximum delay matching
- 6ns maximum pulse width distortion
- Programmable deadtime
- Accepts minimum input pulse width 15ns
- Operation temperature: -40℃~125℃
- RoHS & REACH Qualified
₨400
CompareNSI6602D is a family of high reliability isolated dual- channel gate driver ICs which can be designed to drive power transistor up to 2MHz switching frequency. Each output could source 4A and sink 6A peak current with fast 25ns propagation delay and 5ns maximum delay matching.
The NSI6602 provides 2500Vrms isolation per UL1577 in 5-mm x 5-mm LGA13 package, 3000Vrms isolation in SOP16 package, and 5700Vrms isolation in SOW16 or SOW14 package. System robustness is supported by 150kV/μs typical common-mode transient immunity (CMTI).
The driver operates with a maximum supply voltage of 25V, while the input-side accepts from 2.7V to 5V supply voltage. Under voltage lock-out (UVLO) protection is supported by all the power supply voltage pins.
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- Mounting Style: Through-hole or Surface Mount Device (SMD), depending on application requirements.
- Material: High-quality, durable materials to ensure mechanical strength and reliability in various operating conditions.
- Contact Material: Phosphor Bronze or Beryllium Copper for excellent electrical conductivity and resistance to corrosion.
- Contact Plating: Gold or Tin plating options to maintain a secure and low-resistance connection.
- Pitch: Standard pitch to accommodate 8-pin IC packages with precision.
- Socket Body: Robust design for mechanical stability and ease of handling during insertion and extraction of ICs.
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