MOSFETs, IGBTs and BJTs
NCEP85T16 MOSFET 85T16
NCEP85T16 MOSFET 85T16 Specifications:
- Type Designator: NCEP85T16
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 220 W
- Maximum Drain-Source Voltage |Vds|: 85 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
- Maximum Drain Current |Id|: 160 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 105 nC
- Rise Time (tr): 29 nS
- Drain-Source Capacitance (Cd): 1520 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
- Package: TO220
₨180
CompareNCEP85T16 MOSFET 85T16 Specifications:
- Type Designator: NCEP85T16
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 220 W
- Maximum Drain-Source Voltage |Vds|: 85 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
- Maximum Drain Current |Id|: 160 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 105 nC
- Rise Time (tr): 29 nS
- Drain-Source Capacitance (Cd): 1520 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
- Package: TO220
85T16 mosfet in Pakistan
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