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G40H120DF2 IGBT
Type: IGBT + Anti-Parallel Diode Marking Code: G40H120DF2 Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 468 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 40 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V...
Regular price
Rs.235.00
Regular price
Rs.235.00
Type: IGBT + Anti-Parallel Diode
Marking Code: G40H120DF2
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 468 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 220 pF
Qgⓘ - Total Gate Charge, typ: 158 nC
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G40H120DF2 IGBT
Regular price
Rs.235.00
Regular price
Rs.235.00