HY3215W MOSFET

Specifications:

• Type Designator: HY3215W
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 349 W
• Maximum Drain-Source Voltage |Vds|: 150 V
• Maximum Gate-Source Voltage |Vgs|: 25 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
• Maximum Drain Current |Id|: 130 A
• Maximum Junction Temperature (Tj): 175 °C
• Total Gate Charge (Qg): 135 nC
• Rise Time (tr): 40 nS
• Drain-Source Capacitance (Cd): 480 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
• Package: TO247