K75EEH5 N-channel IGBT — 650V, 90A, 395W, TO-247, with anti-parallel diode

The K75EEH5 is a high-voltage N-channel IGBT (Insulated Gate Bipolar Transistor) with an integrated anti-parallel freewheeling diode, housed in the robust TO-247 through-hole package. Rated at 650V collector-emitter voltage and 90A continuous collector current at 25°C, it is designed for demanding power switching applications including solar inverters, UPS systems, industrial motor drives, and induction heating equipment.

With a low saturation voltage of V_CE(sat) = 1.65V (typ.) at 25°C, a fast rise time of just 33ns, and a maximum junction temperature of 175°C, the K75EEH5 delivers efficient, fast, and thermally robust power conversion. The integrated anti-parallel diode eliminates the need for an external freewheeling diode in bridge and half-bridge topologies.

Key Specifications:

• Part number: K75EEH5
• Type: N-channel IGBT with anti-parallel diode
• Collector-emitter voltage (|V_CE|): 650V
• Gate-emitter voltage (|V_GE|): ±20V max
• Continuous collector current (|I_C|): 90A @ 25°C
• Maximum power dissipation (P_C): 395W
• Collector-emitter saturation voltage (V_CE(sat)): 1.65V typ. @ 25°C
• Gate-emitter threshold voltage (V_GEth): 4.8V max
• Maximum junction temperature (T_j): 175°C
• Rise time (t_r): 33ns typ.
• Output capacitance (C_oes): 130pF typ.
• Total gate charge (Q_g): 160nC typ.
• Package: TO-247 (through-hole, 3-pin)

Key Features:

• 650V / 90A rating — handles high-power switching in industrial and renewable energy applications
• Integrated anti-parallel diode — eliminates external freewheeling diode in bridge topologies
• Low V_CE(sat) = 1.65V — reduced conduction losses for improved efficiency
• Fast rise time = 33ns — suitable for high-frequency switching applications
• 175°C T_j max — thermally robust for high-ambient and high-load environments
• TO-247 package — excellent thermal dissipation via heatsink mounting

Applications:

• Solar inverter switching stages
• UPS (Uninterruptible Power Supply) inverter bridges
• Industrial motor drives and variable frequency drives (VFDs)
• Induction heating systems
• Welding inverters
• Switch-mode power supplies (SMPS)

Note: Mount to an adequate heatsink for operation near rated current. Apply thermal compound between the device and heatsink. Use a gate resistor (typically 10–22Ω) to control switching speed and reduce EMI. Refer to the K75EEH5 datasheet for full SOA and gate drive guidelines.