MM75GAU65BX IGBT — 650V 75A trench FS-technology, TO-247 package
The MM75GAU65BX is a 650V, 75A N-channel IGBT (Insulated Gate Bipolar Transistor) manufactured using advanced trench field-stop (FS) technology. This technology delivers an excellent balance of low conduction losses and fast switching performance, making it a preferred choice for high-efficiency power conversion designs. The integrated fast and soft-recovery freewheeling diode eliminates the need for an external anti-parallel diode, simplifying circuit design and reducing component count.
Key Specifications:
- Part number: MM75GAU65BX
- Type: N-channel IGBT with integrated freewheeling diode
- Collector-emitter voltage (VCE): 650V
- Continuous collector current (IC): 75A @ 25°C
- Gate-emitter voltage (VGE): ±20V max
- VCE(sat): low, with positive temperature coefficient (safe for parallel operation)
- Technology: Trench field-stop (FS)
- Freewheeling diode: integrated, fast and soft reverse recovery
- Package: TO-247 (through-hole, 3-pin)
Key Features:
- Trench FS-technology — low conduction and switching losses for high-efficiency operation
- Positive temperature coefficient of VCE(sat) — enables safe parallel operation of multiple IGBTs
- Fast switching with short tail current — reduces switching losses at high frequencies
- Integrated fast soft-recovery freewheeling diode — minimises reverse recovery losses and EMI
- TO-247 package — easy heatsink mounting for high-power applications
Applications:
- UPS (Uninterruptible Power Supply) inverter stages
- AC motor drives and variable frequency drives (VFD)
- General-purpose PWM inverters
- Solar inverters and grid-tie converters
- Induction heating systems
- Welding inverters
Note: The TO-247 tab is electrically connected to the Collector. Use electrical isolation when mounting to a grounded heatsink. A heatsink is required for operation above low currents. Refer to the MM75GAU65BX datasheet for gate drive and thermal derating guidelines.