NCE82H140 N-channel power MOSFET — 82V 140A 220W, TO-220AB
The NCE82H140 is a high-current, low-Rds(on) N-channel power MOSFET from NCE (Ncepower), rated at 82V drain-source voltage and 140A continuous drain current. With an exceptionally low on-state resistance of just 5.2mΩ and a 220W power dissipation rating, it is optimised for high-efficiency power switching applications including motor drives, synchronous rectification, DC-DC converters, and battery management systems. The TO-220AB package makes it easy to mount with a heatsink for thermal management in demanding designs.
Key Specifications:
- Part number: NCE82H140
- Type: N-channel enhancement mode power MOSFET
- Drain-source voltage (Vᴰₛ): 82V max
- Gate-source voltage (Vᴳₛ): ±20V max
- Continuous drain current (Iᴰ): 140A @ 25°C
- Maximum power dissipation (Pᴰ): 220W
- Gate threshold voltage (Vᴳₛ(th)): 4V max
- Drain-source on-state resistance (Rᴰₛ(on)): 5.2mΩ max
- Total gate charge (Qᴳ): 158nC typ.
- Rise time (tᵣ): 42ns typ.
- Output capacitance (Cₒₛₛ): 445pF typ.
- Maximum junction temperature (Tⱼ): 175°C
- Package: TO-220AB (through-hole, 3-pin)
Pin Configuration (TO-220AB):
- Pin 1: Gate (G)
- Pin 2: Drain (D) — connected to tab
- Pin 3: Source (S)
Applications:
- DC motor drives and H-bridge circuits
- Synchronous rectification in SMPS
- Battery management systems (BMS)
- DC-DC buck and boost converters
- Electronic speed controllers (ESC) for motors
- Load switching and power distribution
- Solar charge controllers
Note: The TO-220AB tab is electrically connected to the Drain. Use electrical isolation (mica pad or insulating thermal pad) when mounting to a grounded heatsink. A heatsink is strongly recommended for continuous operation above low currents.