RHRP30120 hyperfast soft-recovery diode — 1200V, 30A, TO-247, freewheeling and clamping

The RHRP30120 is a 1200V, 30A hyperfast soft-recovery rectifier diode from ON Semiconductor (onsemi), housed in the TO-247 through-hole package. It features silicon nitride passivated ion-implanted epitaxial planar construction, delivering half the recovery time of standard ultrafast diodes while maintaining soft recovery characteristics that minimise voltage ringing and electrical noise in high-frequency power switching circuits.

Designed as a freewheeling and clamping diode for IGBT and MOSFET-based power stages, the RHRP30120 reduces switching losses in the associated transistors by minimising stored charge during reverse recovery. It is well-suited for use in solar inverters, motor drives, UPS systems, and high-frequency switch-mode power supplies operating at 1200V bus voltages.

Key Specifications:

• Part number: RHRP30120
• Repetitive peak reverse voltage (V_RRM): 1200V
• Average forward current (I_F(AV)): 30A
• Forward voltage drop (V_F): low (hyperfast epitaxial construction)
• Recovery type: hyperfast, soft recovery
• Recovery time: approximately half that of standard ultrafast diodes
• Construction: silicon nitride passivated, ion-implanted epitaxial planar
• Package: TO-247 (through-hole, 3-pin)

Key Features:

• 1200V / 30A rating — suitable for high-voltage IGBT inverter freewheeling applications
• Hyperfast soft recovery — minimises reverse recovery current spike, reducing ringing and EMI
• Low stored charge — reduces switching losses in associated IGBTs and MOSFETs
• Silicon nitride passivation — enhanced reliability and long-term stability
• TO-247 package — excellent thermal dissipation via heatsink mounting

Applications:

• IGBT freewheeling diode in motor drive inverter bridges
• Clamping diode in high-voltage switching power supplies
• Solar inverter rectifier and freewheeling stages
• UPS inverter bridge freewheeling diode
• High-frequency SMPS output rectification
• Boost PFC stage diode

Note: Mount to an adequate heatsink with thermal compound for operation near rated current. The soft recovery characteristic is critical in reducing di/dt-induced voltage spikes across the IGBT — verify compatibility with your switching frequency and gate drive design. Refer to the RHRP30120 datasheet for full reverse recovery and thermal derating curves.