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YGW40N65F1 IGBT
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Rs.250.00
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Rs.250.00
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Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, type: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, type: 100 pF
Qgⓘ - Total Gate Charge, type: 90 nC
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YGW40N65F1 IGBT