YGW75N65F1 IGBT — 650V 150A N-channel power transistor, TO-247
The YGW75N65F1 is a high-voltage, high-current N-channel IGBT (Insulated Gate Bipolar Transistor) with an integrated anti-parallel freewheeling diode, housed in a TO-247 package. Rated at 650V collector-emitter voltage and 150A collector current, it is designed for demanding power switching applications including motor drives, inverters, UPS systems, and induction heating equipment. The low saturation voltage (Vₓₑₛₐₜ = 1.7V typ.) and fast switching characteristics make it suitable for high-efficiency power conversion designs.
Key Specifications:
- Type: IGBT + integrated anti-parallel freewheeling diode
- Channel: N-channel
- Collector-Emitter voltage (Vₓₑ): 650V max
- Gate-Emitter voltage (Vᴳₑ): ±20V max
- Collector current (Iₓ): 150A @ 25°C
- Maximum power dissipation (Pₓ): 500W
- Collector-Emitter saturation voltage (Vₓₑₛₐₜ): 1.7V typ. @ 25°C
- Gate-Emitter threshold voltage (Vᴳₑₜₕ): 6.2V max
- Rise time (tᵣ): 40ns typ.
- Output capacitance (Cₒₑₛ): 200pF typ.
- Total gate charge (Qᴳ): 260nC typ.
- Maximum junction temperature (Tⱼ): 175°C
- Package: TO-247 (through-hole, 3-pin)
Pin Configuration (TO-247):
- Pin 1: Gate (G)
- Pin 2: Collector (C) — connected to tab
- Pin 3: Emitter (E)
Applications:
- Variable frequency motor drives (VFD)
- Solar inverters and grid-tie inverters
- UPS (Uninterruptible Power Supply) systems
- Induction heating and welding equipment
- Switch-mode power supplies (SMPS)
- Electric vehicle (EV) power electronics
Note: The TO-247 tab is electrically connected to the Collector. Use electrical isolation (mica pad or thermal pad with insulating hardware) when mounting to a heatsink if the heatsink is grounded. A heatsink is strongly recommended for operation above low duty cycles.