The TLP350 IC / TLP350S IC consists of a GaAℓAs light-emitting diode and an integrated photodetector. This unit is an 8-lead DIP package. The TLP350 is suitable for gate-driving IGBTs or power MOSFETs.

The TLP350 IC / TLP350S IC consists of a GaAAs light-emitting diode and an integrated photodetector. This unit is an 8-lead DIP package. The TLP350 is suitable for gate-driving IGBTs or power MOSFETs. Peak output current = ±2.5A (max) Guaranteed performance over temperature to 100°C Supply current: ICC 2 mA (max) Power supply voltage: VCC 30 V Threshold input current: I

FLH 5 mA (max) Switching time (tpLH/tpHL) 500 ns (max) Common mode transient immunity: 15 kV/s Isolation voltage: 3750 Vrms UL Recognized No.E67349 Option(D4) VDE Approved: DIN EN 60747-5-2

Maximum Operating Insulation Voltage: 890VPK Highest Permissible Over Voltage Please designate 6000VPK (Note): When EN 60747-5-2 approved type is needed, TOSHIBA 11-10C4 Unit: mm

TLP350 IC price in pakistan

TLP350S IC price in pakistan