6R070C6 MOSFET IPW60R070C6

6R070C6 MOSFET Specifications:

• Type Designator: IPW60R070C6
• Marking Code: 6R070C6
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 391 W
• Maximum Drain-Source Voltage |Vds|: 600 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
• Maximum Drain Current |Id|: 53 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 170 nC
• Rise Time (tr): 12 nS
• Drain-Source Capacitance (Cd): 215 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

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