FGY75T120SQDN IGBT FGY75T120

FGY75T120SQDN IGBT 75T120 Specifications:

• Type Designator: FGY75T120SQDN
• Type: IGBT + Anti-Parallel Diode
• Type of IGBT Channel: N
• Maximum Power Dissipation (Pc), W: 790
• Maximum Collector-Emitter Voltage |Vce|, V: 1200
• Maximum Gate-Emitter Voltage |Vge|, V: 20
• Maximum Collector Current |Ic| @25℃, A: 150
• Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
• Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
• Maximum Junction Temperature (Tj), ℃: 175
• Rise Time (tr), typ, nS: 96
• Collector Capacity (Cc), typ, pF: 242
• Total Gate Charge (Qg), typ, nC: 399
• Package: TO247

75T120

75T120 IGBT in pakistan