G40H65DFB IGBT — 650V, 40A, trench gate field stop, HB series, TO-247, inverter and motor drive
The G40H65DFB is a 650V, 40A IGBT from the HB (High-performance Balanced) series, developed using an advanced proprietary trench gate field stop structure. It is designed to deliver an optimum balance between conduction loss and switching loss, maximising efficiency in frequency converter, motor drive, and inverter applications operating at medium to high switching frequencies.
The device features a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution, enabling safer and more reliable paralleling of multiple devices for higher current applications. Its field stop structure reduces tail current during turn-off, improving switching efficiency compared to conventional punch-through IGBTs.
Key Specifications:
- Part number: G40H65DFB
- Collector-emitter voltage (VCE): 650V
- Continuous collector current (IC): 40A
- Gate-emitter voltage (VGE): ±20V (max)
- Structure: trench gate, field stop (HB series)
- VCE(sat) temperature coefficient: slightly positive (safe for paralleling)
- Package: TO-247 (through-hole, 3-pin)
Key Features:
- 650V / 40A rating — suitable for 3-phase inverter bridges and motor drive half-bridge stages
- Trench gate field stop structure — reduced conduction loss and improved switching speed vs. planar IGBTs
- Optimised conduction/switching loss balance — maximises efficiency across a wide switching frequency range
- Positive VCE(sat) temperature coefficient — enables safe paralleling for higher current designs
- Tight parameter distribution — consistent performance across production batches, ideal for paralleled designs
- TO-247 package — excellent thermal performance with heatsink mounting
Applications:
- 3-phase motor drive inverter bridges (VFD)
- Solar inverter switching stage
- UPS inverter half-bridge and full-bridge stages
- Induction heating power stages
- DC-DC converter switching element
- Welding inverter power stage
Note: Mount to an adequate heatsink with thermal compound for operation near rated current. Use a dedicated IGBT gate driver IC (e.g. L6388D, IR2110, or equivalent) with appropriate gate resistor (typically 10–22Ω) for reliable switching. Refer to the G40H65DFB datasheet for gate charge, switching energy, and thermal derating curves.