Product successfully added to your shopping cart
Added to wishlist
There are items in your cart.
G60T60AK3HD IGBT
Type: IGBT + Anti-Parallel Diode Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 483 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V |Ic|ⓘ - Maximum Collector Current: 120 A @25℃ |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃ |VGEth|ⓘ -...
Regular price
Rs.350.00
Regular price
Rs.350.00
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 483 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 124 nS
Coesⓘ - Output Capacitance, typ: 224 pF
Qgⓘ - Total Gate Charge, typ: 117 nC
Check out more products by clicking here
G60T60AK3HD IGBT Price in Pakistan
Related Products
My Store
60R041C6 MOSFET IPW60R041C6 N-Channel Features • Extremely low losses due to very...
My Store
K75T60 IGBT IKW75N60Tis an Insulated Gate Bipolar Transistor manufactured by Infineon Technologies....
My Store
The IR2104 IC is a high-speed Half-Bridge gate driver chip that accepts...
My Store
The IR2101 IC / IR2101S IC is a high voltage, high-speed power...
My Store
The IR2103 IC / IR2103S IC are high voltage, high-speed power MOSFET...
My Store
The IR2106 IC / IR2106S IC are high voltage, high-speed power MOSFET...
My Store
The IR2109 IC / IR2109S IC are high voltage, high-speed power MOSFET...
G60T60AK3HD IGBT
Regular price
Rs.350.00
Regular price
Rs.350.00