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G75T60AK3HD IGBT
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G75T60AK3HD IGBT

Rs.380.00
Sale price: Rs.380.00 Regular price: Sale: -0%
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Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 390 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 92 nS
Coesⓘ - Output Capacitance, typ: 268 pF
Qgⓘ - Total Gate Charge, typ: 433 nC

G75T60AK3HD IGBT

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