HY1920P MOSFET

HY1920P MOSFET Specifications:

• Type Designator: HY1920P
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 375 W
• Maximum Drain-Source Voltage |Vds|: 200 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 90 A
• Maximum Junction Temperature (Tj): 175 °C
• Total Gate Charge (Qg): 130.4 nC
• Rise Time (tr): 45 nS
• Drain-Source Capacitance (Cd): 392 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
• Package: TO220

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