IRFP4468 MOSFET

IRFP4468 MOSFET Specifications:

• Type Designator: IRFP4468
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 520 W
• Maximum Drain-Source Voltage |Vds|: 100 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 290 A
• Maximum Junction Temperature (Tj): 175 °C
• Total Gate Charge (Qg): 360 nC
• Rise Time (tr): 230 nS
• Drain-Source Capacitance (Cd): 1360 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
• Package: TO247AC