IRFP4668 MOSFET

IRFP4668 MOSFET Specifications:

• Type Designator: IRFP4668
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 520 W
• Maximum Drain-Source Voltage |Vds|: 200 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
• Maximum Drain Current |Id|: 130 A
• Maximum Junction Temperature (Tj): 175 °C
• Total Gate Charge (Qg): 161 nC
• Rise Time (tr): 105 nS
• Drain-Source Capacitance (Cd): 810 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
• Package: TO247AC

IRFP 4668 MOSFET in pakistan

IRFP 4668 in pakistan