MCR100-8 SCR Thyristor Specifications:

• Blocking voltage to 600V
• On-state RMS current to 0.8A
• Non-repetitive peak on-state current to 9A
• Maximum peak gate power (P_GM): 0.01 W
• Maximum repetitive peak and off-state voltage (V_DRM): 600 V
• Maximum average on-state current (I_T(AVR)): 1 A
• Maximum RMS on-state current (I_T(RMS)): 1 A
• Non-repetitive surge peak on-state current (I_TSM): 10 A
• Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
• Critical rate of rise of off-state voltage (dV/dt): 35 V/µs
• Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
• Junction to ambient thermal resistance (R_TH(j-a)): 200 K/W
• Junction to case thermal resistance (R_TH(j-c)): 50 K/W
• Triggering gate voltage (V_GT): 1 V
• Peak on-state voltage drop (V_TM): 1.6 V
• Triggering gate current (I_GT): 0.2 mA
• Holding current (I_H): 2 mA

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