47N60C3 MOSFET FEATURES

• ·Static drain-source on-resistance: RDS(on)≤70mΩ
• ·Enhancement mode:
• ·100% avalanche tested
• ·Minimum Lot-to-Lot variations for robust device performance and reliable operation

DESCRIPTION

·Improved Transconductance

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 47 IDM Drain Current-Single Pulsed 141 PD Total Dissipation @TC=25℃ 415 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.3 62 UNIT ℃/W ℃/W SPW47N60C3 ISPW47N60C3

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 47 IDM Drain Current-Single Pulsed 141 PD Total Dissipation @TC=25℃ 415 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.3 62 UNIT ℃/W ℃/W SPW47N60C3 ISPW47N60C3

47N60 mosfet price in Pakistan

">