MOSFETs, IGBTs and BJTs
60R041C6 MOSFET N-Channel
60R041C6 MOSFET Specifications:
- Manufacturer: Infineon
- Product Category: MOSFET
- RoHS: Details
- Technology: Si
- Mounting Style: Through Hole
- Package/Case: TO-247-3
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Id – Continuous Drain Current: 77.5 A
- Rds On – Drain-Source Resistance: 37 mOhms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
- Vgs th – Gate-Source Threshold Voltage: 2.5 V
- Qg – Gate Charge: 290 nC
- Pd – Power Dissipation: 481 W
₨275
Compare60R041C6 MOSFET IPW60R041C6 N-Channel Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1 qualified, Pb-free plating, Halogen
The main parameters:
- Channel type: N
- Large continuous drain current: 77 A
- Large drain-source voltage: 650 V
- Large drain-source resistance: 41 mΩ
- Large gate threshold voltage: 3.5V
- Small gate threshold voltage: 2.5V
- Large gate-source voltage: ±20 V
- Package type: TO-247
Applications
PFC stages, hard-switching PWM stages and resonant-switching PWM stages for
e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
60R041C6 MOSFET in pakistan
41C6 mosfet in pakistan
Related products
-
MOSFETs, IGBTs and BJTs
IRF2807 MOSFET 75V
IRF2807 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2153 IC DIP8 MOSFET Driver
IR2153 IC Features- Integrated 600 V half-bridge gate driver
- 15.6 V zener clamp on VCC
- True micropower start-up
- Tighter initial deadtime control
- Low temperature coefficient deadtime
- Shutdown feature (1/6th Vcc) on CT pin
- Increased undervoltage lockout Hysteresis (1 V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Excellent latch immunity on all inputs and outputs
- ESd protection on all leads
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP352 IC DIP8 TLP352S SOP8 Driver
Features:
- Buffer logic type (totem pole output)
- Output peak current: ±2.5 A (max)
- Operating temperature: -40 to 125 C
- Supply current: 3.0 mA (max)
- Supply voltage: 15 to 30 V
- Threshold input current: 5 mA (max)
- Propagation delay time: 200 ns (max)
- Common-mode transient immunity: ±20 kV/µs (min)
- Isolation voltage: 3750 Vrms (min)
- Safety standards
- UL-approved: UL1577, File No.E67349
- cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
- VDE-approved: EN60747-5-5
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2106 IC DIP8 IR2106S SOP8 Driver
Features- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout
- 3.3 V, 5 V, and 15 V logic input compatible
- Matched propagation delay for both channels
- Logic and power ground + /- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Outputs in phase with inputs
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2118 IC DIP8 IR2118S SOP8 Driver
Features- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply ranges from 10 to 20 V
- Undervoltage lockout
- CMOS Schmitt-triggered inputs with pull-down
- Output out of phase with input (IR2118) or in phase with input (IR2117 )
SKU: n/a
