NCE82H140 MOSFET



Type Designator: NCE82H140 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 220 W |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ - Maximum Drain Current: 140 A Tjⓘ -...

Regular price Rs.180.00
Regular price Rs.180.00

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Type Designator: NCE82H140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 158 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 445 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

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NCE82H140 MOSFET
NCE82H140 MOSFET
Regular price Rs.180.00
Regular price Rs.180.00