MOSFETs, IGBTs and BJTs
FGY75T120SQDN IGBT FGY75T120
FGY75T120SQDN IGBT 75T120 Specifications:
- Type Designator: FGY75T120SQDN
- Type: IGBT + Anti-Parallel Diode
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 790
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Maximum Gate-Emitter Voltage |Vge|, V: 20
- Maximum Collector Current |Ic| @25℃, A: 150
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 96
- Collector Capacity (Cc), typ, pF: 242
- Total Gate Charge (Qg), typ, nC: 399
- Package: TO247
₨400
CompareFGY75T120SQDN IGBT 75T120 Specifications:
- Type Designator: FGY75T120SQDN
- Type: IGBT + Anti-Parallel Diode
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 790
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Maximum Gate-Emitter Voltage |Vge|, V: 20
- Maximum Collector Current |Ic| @25℃, A: 150
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 96
- Collector Capacity (Cc), typ, pF: 242
- Total Gate Charge (Qg), typ, nC: 399
- Package: TO247
75T120 price in pakistan
75T120 IGBT in pakistan
Related products
-
MOSFETs, IGBTs and BJTs
IR2104 IC DIP8 IR2104S SOP8 Driver
Features and Specifications
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply ranges from 10 to 20V
- Undervoltage lockout
- 3.3V, 5V, and 15V input logic compatible
- Cross-conduction prevention logic
- Internally set deadtime
- High-side output in phase with the input
- Shut down input turns off both channels
- Matched propagation delay for both channels
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2103 IC DIP8 IR2103S SOP8 Driver
Features- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout
- 3.3 V, 5 V, and 15 V logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- Internal set deadtime
- High side output in phase with HIN input
- Low side output out of phase with LIN input
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
TLP352 IC DIP8 TLP352S SOP8 Driver
Features:
- Buffer logic type (totem pole output)
- Output peak current: ±2.5 A (max)
- Operating temperature: -40 to 125 C
- Supply current: 3.0 mA (max)
- Supply voltage: 15 to 30 V
- Threshold input current: 5 mA (max)
- Propagation delay time: 200 ns (max)
- Common-mode transient immunity: ±20 kV/µs (min)
- Isolation voltage: 3750 Vrms (min)
- Safety standards
- UL-approved: UL1577, File No.E67349
- cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
- VDE-approved: EN60747-5-5
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF3710 MOSFET 100V
IRF3710 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2109 IC DIP8 IR2109S SOP8 Driver
Features- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High side output in phase with IN input
- Logic and power ground + /- 5 V offset
- Internal 540ns dead-time
- Lower di/dt gate driver for better noise immunity
- Shut down input turns off both channels
SKU: n/a
