MOSFETs, IGBTs and BJTs
G60N60BN3H IGBT
Features
- 30 A, 600 V, TC = 110°C
- Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A
- Typical Fall Time . . . . . . . . . . . . . 90 ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
₨350
CompareThe G60N60BN3H combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
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G60N60BN3H IGBT Price in Pakistan
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