Recent Products
[recent_products per_page="4" columns="4"]
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MOSFETs, IGBTs and BJTs
YGW40N65F1 IGBT
YGW40N65F1 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 188 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 80 nS
Coesⓘ – Output Capacitance, typ: 100 pF
Qgⓘ – Total Gate Charge, typ: 90 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
G60T60AK3HD IGBT
G60T60AK3HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 483 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 124 nS
Coesⓘ – Output Capacitance, typ: 224 pF
Qgⓘ – Total Gate Charge, typ: 117 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
G75T65AK5HD IGBT
G75T65AK5HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 103 nS
Coesⓘ – Output Capacitance, typ: 278 pF
Qgⓘ – Total Gate Charge, typ: 173 nCSKU: n/a -
MOSFETs, IGBTs and BJTs
FGH75T65SQD IGBT
FGH75T65SQD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 375 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 10 nS
Coesⓘ – Output Capacitance, typ: 155 pF
Qgⓘ – Total Gate Charge, typ: 128 nCSKU: n/a
