Product Carousel Tabs
STC3028 Digital Temperature And Humidity Controller
STC3028 Digital Temperature And Humidity Controller Specifications:
18650 Lithium Battery Charger Protection Board Module
Specifications:
2DM860 Digital Stepper Driver
2DM860 Digital Stepper Driver Specifications:
433Mhz RF Transmitter and Receiver Module
<strong>Materials:
at first let’s take a look for what we need :
1) 2 Arduino Board “I used Uno”
2) RF 315MHz or 433MHz transmitter-receiver module .
3) jumper wire .
4) BreadBoard .
5)External Power supply (9V Battery *2) “Optional”
5815M RDA5815M QFN-20 Signal IC
5815M IC RDA5815M QFN-20 Signal IC Specifications:
ATtiny45 Microcontroller AVR
ATtiny45 Microcontroller Features
High Performance, Low Power AVR® 8-Bit Microcontroller
Advanced RISC Architecture – 120 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation
Non-volatile Program and Data Memories
Robotic Arm 4 Degrees Of Freedom
USB based version with powerful prewritten BotBoarduino programs
• Advanced inverse kinematics positioning control
• Includes everything you need to control the arm with a separate PS2 controller
• Easily control a differentially-steered vehicle with the addition of a motor controller
2wd Car Chasis
Features:
ACS712 30A Range Current Sensor Module
Specifications:
TTP229 Touch Keypad 16 Keys Capacitive Module 4×4
TTP229 Touch Keypad Specifications:
TF Card U Disk MP3 Format Decoder Board Module Audio Player
TF Card U Disk Decoder Module Specifications:
DB25 Connector Female
Specifications:
Xeltek Superpro 6100N Universal Device Programmer
Features:
Products Carousel
Television Entertainment
Arduino
Bestsellers
Top Categories this Month
Trending Products
Recommendation for your manager
YGW40N65F1 IGBT
YGW40N65F1 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 188 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 80 nS
Coesⓘ – Output Capacitance, typ: 100 pF
Qgⓘ – Total Gate Charge, typ: 90 nC
G60T60AK3HD IGBT
G60T60AK3HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 483 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 124 nS
Coesⓘ – Output Capacitance, typ: 224 pF
Qgⓘ – Total Gate Charge, typ: 117 nC
G75T65AK5HD IGBT
G75T65AK5HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 103 nS
Coesⓘ – Output Capacitance, typ: 278 pF
Qgⓘ – Total Gate Charge, typ: 173 nC
FGH75T65SQD IGBT
FGH75T65SQD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 375 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 10 nS
Coesⓘ – Output Capacitance, typ: 155 pF
Qgⓘ – Total Gate Charge, typ: 128 nC
G75T65AK5SD IGBT
G75T65AK5SD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 103 nS
Coesⓘ – Output Capacitance, typ: 278 pF
Qgⓘ – Total Gate Charge, typ: 173 nC
YGW75N65F1 IGBT
YGW75N65F1 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 500 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.2 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 40 nS
Coesⓘ – Output Capacitance, typ: 200 pF
Qgⓘ – Total Gate Charge, typ: 260 nC
KGF75N60KDB IGBT
KGF75N60KDB IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 357 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 50 nS
Coesⓘ – Output Capacitance, typ: 250 pF
Qgⓘ – Total Gate Charge, typ: 250 nC
KGF75N65KDF IGBT
KGF75N65KDF IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 484 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.77 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 115 nS
Coesⓘ – Output Capacitance, typ: 198 pF
Qgⓘ – Total Gate Charge, typ: 128 nC
MM75GAU65BX IGBT
MM75GAU65BX IGBT Features:
Applications:
K75EEH5 IGBT
K75EEH5 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EEH5
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 395 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 33 nS
Coesⓘ – Output Capacitance, typ: 130 pF
Qgⓘ – Total Gate Charge, typ: 160 nC
G40H120DF2 IGBT
G40H120DF2 IGBT Features:
Type: IGBT + Anti-Parallel Diode
Marking Code: G40H120DF2
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 468 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 37 nS
Coesⓘ – Output Capacitance, typ: 220 pF
Qgⓘ – Total Gate Charge, typ: 158 nC
60T65FD IGBT
60T65FD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Marking Code: 60T65FD
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 450 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 190 nS
Coesⓘ – Output Capacitance, typ: 200 pF
Qgⓘ – Total Gate Charge, typ: 110 nC
G75T60AK3HD IGBT
G75T60AK3HD IGBT Features:
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 390 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 7 V
Tjⓘ – Maximum Junction Temperature: 150 ℃
trⓘ – Rise Time, typ: 92 nS
Coesⓘ – Output Capacitance, typ: 268 pF
Qgⓘ – Total Gate Charge, typ: 433 nC
DB37 Cover
DB37 Cover Features :
DB50 Male Connector
Features