Welcome to the cutting-edge realm of power semiconductors, where innovation meets efficiency to power the future. Our comprehensive product category features three distinct yet equally essential components: MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), and BJTs (Bipolar Junction Transistors).
Harness the power of MOSFETs, the epitome of electronic switching. With their low on-state resistance, high switching speed, and remarkable efficiency.Introducing the robust and versatile IGBTs, the perfect blend of MOSFET and BJT technologies. These insulated gate devices are engineered for high-power applications, offering the best of both worlds. Explore the foundation of electronic amplification with BJTs, the classic bipolar junction transistors. Known for their reliability and simplicity, BJTs are indispensable in audio amplifiers, signal-processing circuits, and low-power applications.
MOSFETs, IGBTs and BJTs
Showing 1–15 of 54 results
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MOSFETs, IGBTs and BJTs
075N15N MOSFET
075N15N MOSFET Specifications
- Type Designator: IPI075N15N3
- Marking Code: 075N15N
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 100 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 70 nC
- Rise Time (tr): 35 nS
- Drain-Source Capacitance (Cd): 638 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
SKU: n/a -
MOSFETs, IGBTs and BJTs
60R041C6 MOSFET N-Channel
60R041C6 MOSFET Specifications:
- Manufacturer: Infineon
- Product Category: MOSFET
- RoHS: Details
- Technology: Si
- Mounting Style: Through Hole
- Package/Case: TO-247-3
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Id – Continuous Drain Current: 77.5 A
- Rds On – Drain-Source Resistance: 37 mOhms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
- Vgs th – Gate-Source Threshold Voltage: 2.5 V
- Qg – Gate Charge: 290 nC
- Pd – Power Dissipation: 481 W
SKU: 60R041C6 -MOSFET -
MOSFETs, IGBTs and BJTs
6R070C6 MOSFET IPW60R070C6
6R070C6 MOSFET Specifications:
- Type Designator: IPW60R070C6
- Marking Code: 6R070C6
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 391 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
- Maximum Drain Current |Id|: 53 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 170 nC
- Rise Time (tr): 12 nS
- Drain-Source Capacitance (Cd): 215 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
SKU: n/a -
MOSFETs, IGBTs and BJTs, ICs and Optocouplers
A3120 IC HCPL3120 DIP8 SOP8 Driver
Features:
- 2.0 A Minimum Peak Output Current
- 15 kV/µs Minimum Common Mode Rejection (CMR) at VCM = 1500 V
- 0.5 V Maximum Low-Level Output Voltage (VOL) Eliminates the Need for a Negative Gate Drive
- ICC = 5 mA Maximum Supply Current
- Under Voltage Lock-Out Protection (UVLO) with Hysteresis
- Wide Operating VCC Range: 15 to 30 Volts
- 500 ns Maximum Switching Speeds
- Industrial Temperature Range : -40°C to 100°C
SKU: n/a -
ICs and Optocouplers, MOSFETs, IGBTs and BJTs
A3150 IC HCPL3150 DIP8 SOP8 Driver
A3150 IC HCPL3150 Driver Features
- 0.5 A Minimum Peak Output
- Current
- 15 kV/µs Minimum Common
- Mode Rejection (CMR) at
- VCM = 1500 V
- 1.0 V Maximum Low Level
- Output Voltage (VOL)
- Eliminates Need for
- Negative Gate Drive
- ICC = 5 mA Maximum Supply
- Current
- Under Voltage Lock-Out
- Protection (UVLO) with
- Hysteresis
- Wide Operating VCC Range:
- 15 to 30 Volts
- 500 ns Maximum Switching
- Speeds
- Industrial Temperature
- Range: -40°C to 100°C
- Safety and Regulatory
- Approval: UL Recognized
- 2500 Vrms for 1 min. per
- UL1577
- VDE 0884 Approved with VIORM = 630 Vpeak (Option 060 only)
- CSA Approved
SKU: n/a -
MOSFETs, IGBTs and BJTs
FDH055N15A MOSFET
FDH055N15A MOSFET Specifications
- Type Designator: FDH055N15A
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 429 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 118 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 92 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.0059 Ohm
SKU: n/a -
MOSFETs, IGBTs and BJTs
FGY75T120SQDN IGBT FGY75T120
FGY75T120SQDN IGBT 75T120 Specifications:
- Type Designator: FGY75T120SQDN
- Type: IGBT + Anti-Parallel Diode
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 790
- Maximum Collector-Emitter Voltage |Vce|, V: 1200
- Maximum Gate-Emitter Voltage |Vge|, V: 20
- Maximum Collector Current |Ic| @25℃, A: 150
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 96
- Collector Capacity (Cc), typ, pF: 242
- Total Gate Charge (Qg), typ, nC: 399
- Package: TO247
SKU: n/a -
MOSFETs, IGBTs and BJTs
G40H65DFB IGBT 40H65
G40H65DFB IGBT Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
SKU: G40H65DFB-igbt -
MOSFETs, IGBTs and BJTs
G60H65DFB IGBT
G60H65DFB IGBT Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High-frequency converters
SKU: G60H65DFB-IC -
MOSFETs, IGBTs and BJTs
G80H65DFB IGBT
G80H65DFB IGBT Features
- VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Excellent switching performance thanks to the extra driving Kelvin pin
SKU: n/a
