G40H65DFB IGBT 40H65
G40H65DFB IGBT Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
₨230
CompareG40H65DFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation
G40H65DFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation
40H65 Igbt in pakistan
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