G40H65DFB IC
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MOSFETs, IGBTs and BJTs
G40H65DFB IGBT 40H65
G40H65DFB IGBT Features
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
SKU: G40H65DFB-igbt