MOSFETs, IGBTs and BJTs
6R070C6 MOSFET IPW60R070C6
6R070C6 MOSFET Specifications:
- Type Designator: IPW60R070C6
- Marking Code: 6R070C6
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 391 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
- Maximum Drain Current |Id|: 53 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 170 nC
- Rise Time (tr): 12 nS
- Drain-Source Capacitance (Cd): 215 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
₨275
Compare6R070C6 MOSFET Specifications:
- Type Designator: IPW60R070C6
- Marking Code: 6R070C6
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 391 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
- Maximum Drain Current |Id|: 53 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 170 nC
- Rise Time (tr): 12 nS
- Drain-Source Capacitance (Cd): 215 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
6R070C6 ic in pakistan
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