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FGY75T120SQDN IGBT 75T120


FGY75T120SQDN IGBT 75T120 Specifications:

  • Type Designator: FGY75T120SQDN
  • Type: IGBT + Anti-Parallel Diode
  • Type of IGBT Channel: N
  • Maximum Power Dissipation (Pc), W: 790
  • Maximum Collector-Emitter Voltage |Vce|, V: 1200
  • Maximum Gate-Emitter Voltage |Vge|, V: 20
  • Maximum Collector Current |Ic| @25℃, A: 150
  • Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
  • Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
  • Maximum Junction Temperature (Tj), ℃: 175
  • Rise Time (tr), typ, nS: 96
  • Collector Capacity (Cc), typ, pF: 242
  • Total Gate Charge (Qg), typ, nC: 399
  • Package: TO247

400

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FGY75T120SQDN IGBT 75T120 Specifications:

  • Type Designator: FGY75T120SQDN
  • Type: IGBT + Anti-Parallel Diode
  • Type of IGBT Channel: N
  • Maximum Power Dissipation (Pc), W: 790
  • Maximum Collector-Emitter Voltage |Vce|, V: 1200
  • Maximum Gate-Emitter Voltage |Vge|, V: 20
  • Maximum Collector Current |Ic| @25℃, A: 150
  • Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
  • Maximum G-E Threshold Voltage |VGE(th)|, V: 6.5
  • Maximum Junction Temperature (Tj), ℃: 175
  • Rise Time (tr), typ, nS: 96
  • Collector Capacity (Cc), typ, pF: 242
  • Total Gate Charge (Qg), typ, nC: 399
  • Package: TO247

75T120 price in pakistan

75T120 IGBT in pakistan

 

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