MOSFETs, IGBTs and BJTs
075N15N MOSFET
075N15N MOSFET Specifications
- Type Designator: IPI075N15N3
- Marking Code: 075N15N
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 100 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 70 nC
- Rise Time (tr): 35 nS
- Drain-Source Capacitance (Cd): 638 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
₨225
Compare075N15N MOSFET Specifications
- Type Designator: IPI075N15N3
- Marking Code: 075N15N
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 150 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 100 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 70 nC
- Rise Time (tr): 35 nS
- Drain-Source Capacitance (Cd): 638 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
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