TLP350 IC DIP8 TLP350S SOP8 Driver
Features:
- Peak output current : IO = ±2.5A (max)
- Guaranteed performance over temperature: -40 to 100°C
- Supply current: ICC = 2 mA (max)
- Power supply voltage: VCC = 15 to 30 V
- Threshold input current : IFLH = 5 mA (max)
- Switching time (tpLH/tpHL): 500 ns (max)
- Common mode transient immunity: 15 kV/μs
- Isolation voltage: 3750 Vrms
- UL Recognized : UL1577,File No.E67349
- Option(D4)
- VDE Approved: DIN EN 60747-5-2
- Maximum Operating Insulation Voltage: 890VPK
- Highest Permissible Over Voltage: 6000VPK
₨80 – ₨220
CompareThe TLP350 IC / TLP350S IC consists of a GaAâ„“As light-emitting diode and an integrated photodetector. This unit is an 8-lead DIP package. The TLP350 is suitable for gate-driving IGBTs or power MOSFETs.
The TLP350 IC / TLP350S IC consists of a GaAAs light-emitting diode and an integrated photodetector. This unit is an 8-lead DIP package. The TLP350 is suitable for gate-driving IGBTs or power MOSFETs. Peak output current = ±2.5A (max) Guaranteed performance over temperature to 100°C Supply current: ICC 2 mA (max) Power supply voltage: VCC 30 V Threshold input current: I
FLH 5 mA (max) Switching time (tpLH/tpHL) 500 ns (max) Common mode transient immunity: 15 kV/s Isolation voltage: 3750 Vrms UL Recognized No.E67349 Option(D4) VDE Approved: DIN EN 60747-5-2
Maximum Operating Insulation Voltage: 890VPK Highest Permissible Over Voltage Please designate 6000VPK (Note): When EN 60747-5-2 approved type is needed, TOSHIBA 11-10C4 Unit: mm
TLP350 IC price in pakistan
TLP350S IC price in pakistan
| Version | TLP350 DIP (New), TLP350 DIP (Refurbished), TLP350S SOP (New), TLP350S SOP (Refurbished) |
|---|
Related products
-
MOSFETs, IGBTs and BJTs
IR2121 IC DIP8 MOSFET Driver
IR2121 IC Features- Gate drive supply range from 12 to 18 V
- Undervoltage lockout
- Current detection and limiting loop to limit driven power transistor current
- Error lead indicates fault conditions and programs shutdown time
- Output in phase with input
- 2.5 V, 5 V and 15 V input logic compatible
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF3205 MOSFET 55V
IRF3205 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
IRF2807 MOSFET 75V
IRF2807 MOSFET Features- Planar cell structure for wide SOA
- Optimized for the broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry-standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
SKU: n/a -
MOSFETs, IGBTs and BJTs
K75T60 IGBT IKW75N60T 600V 75A
K75T60 IGBT Features and Specifications:
- Very low VCE (sat) 1.5V (typ.)
- Maximum Junction Temperature of 175℃
- Short circuit withstand time 5micro seconds
- Positive temperature coefficient in VCE (sat)
- Very tight parameter distribution
- High ruggedness, temperature-stable behavior
- Very high switching speed
- Low Electro Magnetic Interference
- Very soft and fast recovery anti-parallel Emitter Controlled HE diode
- Pb-free lead plating
- RoHS compliant
SKU: n/a -
MOSFETs, IGBTs and BJTs
IR2104 IC DIP8 IR2104S SOP8 Driver
Features and Specifications
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply ranges from 10 to 20V
- Undervoltage lockout
- 3.3V, 5V, and 15V input logic compatible
- Cross-conduction prevention logic
- Internally set deadtime
- High-side output in phase with the input
- Shut down input turns off both channels
- Matched propagation delay for both channels
SKU: n/a
