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IRF2807 MOSFET 75V


IRF2807 MOSFET Features
  • Planar cell structure for wide SOA
  • Optimized for the broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry-standard through-hole power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

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IRF2807 MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contributes to its wide acceptance throughout the industry.

2807 mosfet in Pakistan

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