FGA40N65SMD
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MOSFETs, IGBTs and BJTs
FGA40N65SMD IGBT
Features
- Maximum Junction Temperature: TJ = 175C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 40 A
- Fast Switching: EOFF = 6.5 J/A
- Tighten Parameter Distribution
- These Devices are Pb−Free and are RoHS Compliant
SKU: n/a
