G60H65DFB IC

G60H65DFB IGBT Features

• Maximum junction temperature: TJ = 175 °C
• High-speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Tight parameter distribution
• Safe paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters
• High-frequency converters