G80H65DFB IC
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MOSFETs, IGBTs and BJTs
G80H65DFB IGBT
G80H65DFB IGBT Features
- VCE(sat) = 1.6 V (typ.) @ IC = 80 A
- Maximum junction temperature: TJ = 175 °C
- High-speed switching series
- Minimized tail current
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Excellent switching performance thanks to the extra driving Kelvin pin
SKU: n/a