IRFBG30

Type Designator: IRFBG30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 125 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 3.1 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 80(max) nC
trⓘ – Rise Time: 25 nS
Cossⓘ – Output Capacitance: 140 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 5 Ohm