STFW3N150

STFW3N150 MOSFET Details:
Marking Code: 3N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 63 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ – Maximum Drain Current: 2.5 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 29.3 nC
trⓘ – Rise Time: 47 nS
Cossⓘ – Output Capacitance: 102 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 9 Ohm