XNF15N60T IC
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MOSFETs, IGBTs and BJTs
XNF15N60T IGBT 15A 600V
XNF15N60T IGBT 15A 600V Specifications:
- Type Designator: XNF15N60T
- Type: IGBT
- Type of IGBT Channel: N
- Maximum Power Dissipation (Pc), W: 38
- Maximum Collector-Emitter Voltage |Vce|, V: 600
- Maximum Gate-Emitter Voltage |Vge|, V: 30
- Maximum Collector Current |Ic| @25℃, A: 30
- Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
- Maximum G-E Threshold Voltage |VGE(th)|, V: 6.2
- Maximum Junction Temperature (Tj), ℃: 175
- Rise Time (tr), typ, nS: 36
- Collector Capacity (Cc), typ, pF: 37
- Total Gate Charge (Qg), typ, nC: 25
- Package: TO-220F
SKU: n/a
