YGW75N65F1 IGBT

  YGW75N65F1 IGBT Features:

Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ – Maximum Power Dissipation: 500 W
|Vce|ⓘ – Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ – Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ – Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ – Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ – Maximum G-E Threshold Voltag: 6.2 V
Tjⓘ – Maximum Junction Temperature: 175 ℃
trⓘ – Rise Time, typ: 40 nS
Coesⓘ – Output Capacitance, typ: 200 pF
Qgⓘ – Total Gate Charge, typ: 260 nC