2SB649 Transistor
2SB649 Transistor details:
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –
Package: TO126
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2SB649 Transistor details:
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –
Package: TO126
2SB649 Transistor Price in Pakistan
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TIP42C Transistor DARLINGTON PNP Price in Pakistan
TIP42C Transistor DARLINGTON PNP Technical Specifications:
- Package Type: TO-220
- Transistor Type: PNP
- Max Collector Current(IC): –6A
- Max Collector-Emitter Voltage (VCE): –100V
- Max Collector-Base Voltage (VCB): –100V
- Max Emitter-Base Voltage (VEBO): –5V
- Max Collector Dissipation (Pc): 65 Watt
- Max Transition Frequency (ft): 3 MHz
- Minimum & Maximum DC Current Gain (hFE): 15 – 75
- Max Storage & Operating temperature Should Be: -65 to +150 Centigrade
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