MOSFETs, IGBTs and BJTs
FGA40N65SMD IGBT
Features
- Maximum Junction Temperature: TJ = 175C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 40 A
- Fast Switching: EOFF = 6.5 J/A
- Tighten Parameter Distribution
- These Devices are Pb−Free and are RoHS Compliant
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CompareFGA40N65SMD IGBT Details: Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature: TJ = 175C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 40 A
- Fast Switching: EOFF = 6.5 J/A
- Tighten Parameter Distribution
- These Devices are Pb−Free and are RoHS Compliant
Applications
Solar Inverter, UPS, Welder, Induction Heating
Telecom, ESS
FGA40N65SMD IGBT Price in Pakistan
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