MOSFETs, IGBTs and BJTs
IRFP4668 MOSFET
IRFP4668 MOSFET Specifications:
- Type Designator: IRFP4668
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 520 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 130 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 161 nC
- Rise Time (tr): 105 nS
- Drain-Source Capacitance (Cd): 810 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
- Package: TO247AC
₨500
CompareIRFP4668 MOSFET Specifications:
- Type Designator: IRFP4668
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 520 W
- Maximum Drain-Source Voltage |Vds|: 200 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
- Maximum Drain Current |Id|: 130 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 161 nC
- Rise Time (tr): 105 nS
- Drain-Source Capacitance (Cd): 810 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm
- Package: TO247AC
IRFP 4668 MOSFET in pakistan
IRFP 4668 in pakistan
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